Standard Practice for Detection of Oxidation Induced Defects in Polished Silicon Wafers
NORM herausgegeben am 10.6.1997
Designation standards: ASTM F1727-97
Note: UNGÜLTIG
Publication date standards: 10.6.1997
The number of pages: 3
Approximate weight : 9 g (0.02 lbs)
Country: American technical standard
Kategorie: Technische Normen ASTM
Keywords:
defects, dislocation, epitaxy, hillock, imperfections, oxidation, preferential etch, shallow pit, silicon, slip, stacking fault, swirl, ICS Number Code 29.045 (Semiconducting materials)