Test Method for Determining Carrier Density in Silicon Epitaxial Layers by Capacitance-Voltage Measurements on Fabricated Junction or Schottky Diodes (Withdrawn 2001)

Informationen über die Norm:

Bezeichnung normen: ASTM F419-94
Anmerkung: UNGÜLTIG
Ausgabedatum normen: 1.1.1994
Zahl der Seiten: 11
Gewicht ca.: 33 g (0.07 Pfund)
Land: Amerikanische technische Norm
Kategorie: Technische Normen ASTM

Die Annotation des Normtextes ASTM F419-94 :

Keywords:
Capacitance-voltage method, Carrier density (in semiconductors), Density-electronic applications, Dielectric breakdown/strength-semiconductor materials, Diodes, Epitaxial wafer, Gate bias, Inhomogeneities, Junction diode, Net carrier density (in semiconductors), Polished silicon wafers/slices, Resistance and resistivity, Schottky diode, Silicon semiconductors, Single-crystal silicon, Voltage, carrier density-silicon epitaxial layers, by capacitance-voltage