Standard Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive Spectrophotometer (Withdrawn 2003)
NORM herausgegeben am 1.1.2000
Designation standards: ASTM F95-89(2000)
Note: UNGÜLTIG
Publication date standards: 1.1.2000
The number of pages: 7
Approximate weight : 21 g (0.05 lbs)
Country: American technical standard
Kategorie: Technische Normen ASTM
Keywords:
epi, epi thickness, epitaxial layer, FTIR, index of refraction, IR, layer thickness, spectrophotometer, ICS Number Code 29.045 (Semiconducting materials)