Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics
NORM herausgegeben am 1.1.2011
Bezeichnung normen: ASTM F996-11
Anmerkung: UNGÜLTIG
Ausgabedatum normen: 1.1.2011
Zahl der Seiten: 7
Gewicht ca.: 21 g (0.05 Pfund)
Land: Amerikanische technische Norm
Kategorie: Technische Normen ASTM
Keywords:
c/v characteristics, current-voltage characteristics, interface states, ionizing radiation, MOSFET, oxide-trapped holes, threshold voltage shift, trapped holes, Current measurement--semiconductors, Electrical conductors (semiconductors), Gate and field oxides, Ionizing radiation, MOSFETs, Radiation exposure--electronic components/devices, Silicon semiconductors, Threshold voltage, ICS Number Code 31.080.30 (Transistors)