Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics
NORM herausgegeben am 10.5.1998
Bezeichnung normen: ASTM F996-98
Anmerkung: UNGÜLTIG
Ausgabedatum normen: 10.5.1998
Zahl der Seiten: 6
Gewicht ca.: 18 g (0.04 Pfund)
Land: Amerikanische technische Norm
Kategorie: Technische Normen ASTM
Keywords:
Current measurement-semiconductors, Electrical conductors-semiconductors, Gate and field oxides, Ionizing radiation, MOSFETs, Radiation exposure-electronic components/devices, Silicon-semiconductor applications, Threshold voltage, separating a total-dose induced mosfet threshold voltage shift into, ICS Number Code 31.080.30 (Transistors)