
Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 2: Test method for defects using optical inspection
NORM herausgegeben am 28.12.2023
Designation standards: GB/T 43493.2-2023
Publication date standards: 28.12.2023
Country: Chinese technical standard
Kategorie: Technische Normen GB