Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects
NORM herausgegeben am 30.1.2019
Designation standards: IEC 63068-1-ed.1.0
Publication date standards: 30.1.2019
The number of pages: 23
Approximate weight : 69 g (0.15 lbs)
Country: International technical standard
Kategorie: Technische Normen IEC
IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.