Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection

The information about the standard:

Designation standards: IEC 63068-2-ed.1.0
Publication date standards: 30.1.2019
The number of pages: 25
Approximate weight : 75 g (0.17 lbs)
Country: International technical standard
Kategorie: Technische Normen IEC

Annotation of standard text IEC 63068-2-ed.1.0 :

IEC 63068-2:2019(E) provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies optical images to enable the detection and categorization of the defects for SiC homoepitaxial wafers. This document deals with a non-destructive test method for the defects so that destructive methods such as preferential etching are out of scope in this document.