General criteria for the operation of testing laboratories.

UNGÜLTIG herausgegeben am 31.10.1989

Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Ambient-rated bipolar transistors for low and high-frequency amplification.

UNGÜLTIG herausgegeben am 15.2.1990

Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Case-rated bipolar transistors for low-frequency amplification.

UNGÜLTIG herausgegeben am 15.2.1990

Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Bipolar transistors for switching applications.

UNGÜLTIG herausgegeben am 15.11.1991

Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Case-rated bipolar transistors for high-frequency amplifications.

UNGÜLTIG herausgegeben am 15.11.1991

Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, up to 100 A.

UNGÜLTIG herausgegeben am 15.2.1990

Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Reverse blocking triode thyristors, ambient and case-rated, up to 100 A.

UNGÜLTIG herausgegeben am 15.2.1990

Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Bidirectional triode thyristors (triacs), ambient or case-rated, up to 100 A.

UNGÜLTIG herausgegeben am 31.1.1992

Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Semiconductor devices. Discrete devices. Field-effect transistors. Blank detail specification for single-gate field-effect transistors, up to 5 W and 1 GHz.

UNGÜLTIG herausgegeben am 15.12.1988

General criteria for the assessment of testing laboratories.

UNGÜLTIG herausgegeben am 31.10.1989